n-type semiconductor

1. In electronics, an interface between a P-type and N-type semiconductor material; such an interface produces a diode effect.
   在电子技术中，一种P型和N型半导体材料之间的界面，这种界面可以产生二极管效应。
2. The surface in the transition region between p-type and n-type semiconductor material at which the donor and acceptor concentration are equal.
   在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
3. Then we subject the semiconductor to impurity doping, which turns it into either a p-type or an n-type semiconductor.
   然后我们使半导体经过渗杂，以将其转变成p型或n型半导体。
4. When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.
   使一块金属与n型半导体接触时，电子将从半导体流到金属。
5. Na-doped model shows the character of p-type semiconductor, and Ni-doped model is n-type semiconductor.
   掺Na后材料具有p型半导体的特性，而掺Ni后则具有n型半导体的特性。
6. ITO ( Indium Tin Oxide) is an n-type semiconductor with heavy-doped and high-degenerated, And having a series of optical 、 chemical and electrical performance.
   ITO（IndiumTinOxide）是一种重掺杂、高简并的n型半导体，具有一系列优异的光学、化学、电学性能。
7. The influence of the addition of n-type semiconductor oxide CeO 2 to Ni-based catalyst on carbon deposition from CH 4 and carbon elimination by CO 2 was studied by using a pulse microreaction technique. The catalysts were characterized by TPR, XPS and hydrogen chemisorption.
   采用脉冲微量反应技术研究了添加n型半导体氧化物CeO2对Ni基催化剂上CH4积炭/CO2消炭性能的影响，用TPR，XPS和氢吸附技术对催化剂进行了表征。
8. With Hall-voltage test, Hall coefficient ( RH)-temperature ( T) curves are determined, and at low temperature range quasi p-type and n-type semiconductor characteristics are found.
   测出它们的霍耳系数与温度的关系RH-1/T曲线，发现低温区有类p-型和n-型两类半导体特性。
9. Polarization curves obtained in a Na2SO4+ K3 [ Fe ( CN) 6]+ K4 [ Fe ( CN) 6] solution indicated that corrosion product film on the anode had the character of n-type semiconductor.
   从硫酸钠+铁氰化钾+亚铁氰化钾溶液中测试的极化曲线来看，镁阳极上的腐蚀产物具有n-型半导体的导电特征。
10. In_2O_3 is an n-type semiconductor and it has been well studied as gas sensor material for detecting ethanol, gasoline, butane, carbon monoxide, methane and ozone, the study of using this material as the ammonia sensor is recognized by workers.
    氧化铟作为一种N型半导体材料，正在被广泛用于乙醇、汽油、丁烷、CO、甲烷、O3等气体气敏传感器的研究，作为NH3敏感传感器的研究工作也正开始受到重视。
11. Experiment results showed that all of anodic films on iron behaved n-type semiconductor characteristic in solution with or without corrosion inhibitor.
    实验表明，有无缓蚀剂铁的阳极膜均表现为N型半导体特性。
12. These phenomena have been discussed based on the mechanism of crystal growth, theory of n-type semiconductor's energy band, carrier concentration and mobility in this paper.
    本文从晶体生长机理、n型半导体能带理论、迁移率和载流子浓度等因素来解释上述结构。
13. By means of this property, the connect lines, P-type semiconductor or N-type semiconductor, P-N junction, and 2D and 3D integrated circuit connection can be made.
    利用这个特性，可制作导电图样，制作连线，制作P型半导体材料和N型半导体材料，制作PN结，制作二维和三维集成电路互连接。
14. Nanometer antimony doped tin oxide ( ATO) is n-type semiconductor and the film of nano-ATO has both high transmittance in visible light and shield percentage in infrared light.
    纳米氧化锡锑（ATO）是一种n型半导体材料，由其制成的膜具有很高的红外屏蔽效果和可见光区良好的透过率，即可以让可见光透过同时又能阻隔热射线。
15. Phosphine ( PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition ( CVD) etc.
    磷化氢（PH3）是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积（CVD）等。
16. TiO_2 is a kind of n-type semiconductor. It has well chemical stability and photo-catalysis activity.
    TiO2作为一种弱的n型半导体材料，具有良好的化学稳定性和光催化活性。
17. TiO2, as an N-type semiconductor, has a wide application prospect in the fields of photocatalyst, photo-induced/ electrochromic, sensors, solar cells and self-cleaning glass because of its unique electronic and optical properties.
    TiO2，作为一种N型半导体，因其独特的电子和光学特性，在光催化、光致/电致变色、传感器、太阳能电池、自清洁玻璃等领域有广阔的应用前景。
18. Titania is a n-type semiconductor, which can be used as photocatalyst.
    二氧化钛（TiO2），作为一种n型半导体，可用作光催化剂，但TiO2光催化剂有光生电子和光生空穴复合几率高，只能被紫外光激发等缺点。
19. Since the discovery of photoelectrochemical splitting of water on n-type semiconductor TiO2 electrodes, TiO2 has become the focus in the field of semiconductor photoelectrochemistry.
    自从发现n型半导体TiO2作为电极发生光电化学反应分解水以来，TiO2成为半导体光电化学领域的研究热点。
20. Tin dioxide is an n-type semiconductor, and has the performance of enduring high temperature and corrosion resistance, it can be used to melt nearly all kinds of glass.
    二氧化锡是一种n型半导体，具有耐高温、耐侵蚀、高温导电性优良等特点，因此，几乎可以用于所有玻璃品种的熔制。
21. Indium tin oxide ( ITO), which is a kind of wide band gap and highly doped n-type semiconductor, is widely used as transparent electrode of various display screen.
    氧化铟锡（ITO）是一种宽禁带、高掺杂的n型半导体，广泛应用于各种显示屏幕的透明电极中。
22. CdS thin film, as N-type semiconductor layer and window layer in solar cell, its quality would directly affect the absorption layer which is prepared on the basis of it and is very important to the efficiency and lifetime of the batteries.
    CdS在太阳电池中作为N型半导体层和窗口层，其质量将直接影响在此基础上制备的吸收层薄膜质量的好坏，对电池的效率和寿命是非常重要的。
23. As an n-type semiconductor material with direct and wide band gap, zinc oxide was widely used in transparent conductive glass, solar cell, flat panel display, gas sensors cell and other fields.
    ZnO是一种直接宽禁带的n型半导体材料，已在透明导电玻璃、太阳能电池、平板显示器和气敏传感器等领域得到了广泛应用。
24. Titanium dioxide as a n-type semiconductor material has been widely concerned because of its chemical stability, cheapness, non-toxicity, high catalytic efficiency, and has good prospect in photocatalytic degradation of environmental pollutants.
    二氧化钛作为n型半导体材料因其化学性质稳定，廉价易得，无毒且催化效率高等优点受到人们的广泛关注，在光催化降解环境污染物方面具有很好的应用前景。
25. N-type semiconductor thin film is deposited on p-type CIGS absorber layer to form p-n junction to separate light-excited carriers.
    为了与p型的CIGS吸收层形成p-n结从而分离光生载流子，需要在其表面制备一层n型半导体薄膜。
26. Photocatalytic oxidation of n-type semiconductor using dissolved oxygen in water as O source, has already become a research focus in water treatment field in the last twenty years.
    以水中溶解氧为氧源，n型半导体，特别是TiO2为催化剂的光催化氧化是近廿年来水处理领域的研究热点之一。
27. This is because the N-type semiconductor/ electrolyte interfaces involved in DSSCs have the same IV characteristics like that of a PN junction.
    这归因于染料敏化太阳能电池中存在的N型半导体/电解质界面具有和PN结相类似的伏安特性，即整流特性。
28. As an intrinsic n-type semiconductor material, we can get a higher electron density, low resistivity, while in the visible region can maintain a high transmission rate, if we dope ZnO by donor ( such as Al, Ga, Zr etc.).
    作为一种本征n型的半导体材料，ZnO通过施主掺杂（如Al、Ga、Zr等），便可以获得较高的电子浓度，较低的电阻率，而在可见光区域仍能保持较高的透射率。
29. Indium Tin Oxide ( ITO) transparent conductive film is an n-type semiconductor with high transmittance in visible region and electrical conductivity.
    掺锡氧化铟（ITO）薄膜是一种兼具高可见光透过率和低电阻率的N型半导体。

noun

1. a semiconductor in which electrical conduction is due chiefly to the movement of electrons